inchange semiconductor product specification isc website www.iscsemi.cn 1 schottky barrier rectifier MBR2030CT features dual rectifier conduction, positive center tap metal silicon junction, majority carrier conduction low power loss/high efficiency high current capability, low forward voltage drop high surge capacity guarding for overvoltage protection for use in low voltage, high frequency inverters, free wheeling, and polarity pr otection applications mechanical characteristics case: epoxy, molded finish: all external surfaces corrosion resistant and terminal leads are readily solderable high temperature soldering guaranteed: 250 max. for 10 seconds absolute maximum ratings(t a =25 ) symbol parameter value unit v rrm v rwm v r peak repetitive reverse voltage working peak reverse voltage dc blocking voltage 30 v v r(rms) rms reverse voltage 21 v i f(av) average rectified forward current t c = 125 20 a i fsm nonrepetitive peak surge current 8.3ms single half sine-wave superimposed on rated load conditions 150 a i rrm peak repetitive reverse current (2.0 s, 1.0khz) 1.0 a t j junction temperature -65~150 t stg storage temperature range -65~175 dv/dt voltage rate of change (rated v r ) 1000 v/ s
inchange semiconductor product specification isc website www.iscsemi.cn 2 schottky barrier rectifier MBR2030CT thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w electrical characteristics (pulse test: pulse width 300 s,duty cycle 2%) symbol parameter conditions max unit v f maximum instantaneous forward voltage i f = 10a ; t c = 125 i f = 20a ; t c = 25 i f = 20a ; t c = 125 0.57 0.84 0.72 v i r maximum instantaneous reverse current rated dc voltage, t c = 25 rated dc voltage, t c = 125 0.1 15 ma
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